The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9000453 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 07, 2015

Filed:

Dec. 21, 2012
Applicants:

David Hamby, Andover, MA (US);

Adam Scotch, Amesbury, MA (US);

Inventors:

David Hamby, Andover, MA (US);

Adam Scotch, Amesbury, MA (US);

Assignee:

Osram Sylvania Inc., Danvers, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H02H 3/20 (2006.01); H05K 1/02 (2006.01); H05K 1/18 (2006.01); H02H 7/20 (2006.01); H05K 1/16 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 3/20 (2013.01); H05K 1/0259 (2013.01); H05K 1/189 (2013.01); H05K 2201/0329 (2013.01); H05K 2201/10106 (2013.01); H05K 1/16 (2013.01); H05K 2201/0738 (2013.01); H05K 2201/10174 (2013.01); H02H 7/20 (2013.01); H02H 9/046 (2013.01);
Abstract

Systems and methods for protecting electrical components such as light emitting diodes are described. In some embodiments, electrical components are protected from high level electrostatic discharge ('ESD') events by a circuit board that provides an intrinsic level of ESD protection. At the same time, such electrical components are protected against low level ESD events by one or more diodes that are electrically coupled thereto. The one or more diodes may be thin film diodes comprising at least one layer of p-type semiconductive material and at least one layer of n-type semiconductive material. Devices including ESD protection and methods for manufacturing such devices are also described.


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