The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Apr. 18, 2012
Applicants:

Yun-mo Chung, Yongin, KR;

Jin-wook Seo, Yongin, KR;

Tak-young Lee, Yongin, KR;

Inventors:

Yun-Mo Chung, Yongin, KR;

Jin-Wook Seo, Yongin, KR;

Tak-Young Lee, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 27/1277 (2013.01); H01L 27/3262 (2013.01);
Abstract

There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area.


Find Patent Forward Citations

Loading…