The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Aug. 09, 2013
Applicant:

So-ra Kwon, Yongin, KR;

Inventor:

So-Ra Kwon, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 51/50 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 51/50 (2013.01); H01L 29/78645 (2013.01); H01L 27/124 (2013.01);
Abstract

Disclosed is a thin film transistor including an active pattern including a first conductive region, a first channel region adjacent to the first conductive region, a second conductive region spaced apart from the first conductive region, a second channel region spaced apart from the first channel region, and a third conductive region spaced apart from the second conductive region, and a gate electrode positioned on the active pattern and including a first gate region crossing the first channel region, a second gate region crossing the second channel region, and a connection gate region connecting the first gate region. The connection gate region, the first gate region, and the second gate region together surround the second conductive region.


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