The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Mar. 14, 2012
Applicants:

Peter Rusian, Ashdod, IL;

Arie Shahar, Moshav Magshimim, IL;

Inventors:

Peter Rusian, Ashdod, IL;

Arie Shahar, Moshav Magshimim, IL;

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 31/08 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/085 (2013.01); H01L 27/1462 (2013.01); H01L 27/14676 (2013.01);
Abstract

Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.


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