The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Jan. 27, 2011
Applicants:

Fumiyuki Tokura, Hamamatsu, JP;

Mitsutoshi Sugiya, Hamamatsu, JP;

Shigeru Suzuki, Hamamatsu, JP;

Takashi Tonbe, Hamamatsu, JP;

Inventors:

Fumiyuki Tokura, Hamamatsu, JP;

Mitsutoshi Sugiya, Hamamatsu, JP;

Shigeru Suzuki, Hamamatsu, JP;

Takashi Tonbe, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K. K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); H01R 13/02 (2006.01); H01R 13/46 (2006.01); H01L 27/146 (2006.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2018 (2013.01); H01L 27/14623 (2013.01); H01L 27/14634 (2013.01); H05K 1/0218 (2013.01); H05K 1/025 (2013.01); H01L 27/14661 (2013.01); H01L 27/14663 (2013.01); H05K 1/0242 (2013.01); H05K 1/113 (2013.01); H05K 2201/09727 (2013.01); H05K 2201/10545 (2013.01); H05K 2201/10674 (2013.01);
Abstract

A connection substrateincludes a base materialformed by stacking a plurality of dielectric layerstoand a plurality of through conductorsprovided penetrating through the dielectric layerstoadjacent to each other. A plurality of radiation shielding filmstoformed integrally with each of the plurality of through conductorsand separated from each other are provided at two or more interlayer parts in the dielectric layersto. A region PRof the radiation shielding film() formed integrally with one through conductorin one interlayer part projected onto a virtual plane normal to a predetermined direction and a region of the radiation shielding filmor() formed integrally with another through conductorin another interlayer part projected onto the virtual plane do not overlap each other. Accordingly, the readout circuits of an integrated circuit device can be protected from radiation, and an increase in parasitic capacitance can be suppressed.


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