logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8999855 B1

PDFFull Text
Expired
Date of Patent:
Apr. 07, 2015

Filed:

Mar. 08, 2013

Manufacturing method of a semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Makoto Honda, Kanagawa, JP;

Tomonori Aoyama, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Patterson & Sheridan LLP

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 21/0206 (2013.01); H01L 21/02063 (2013.01); H01L 21/31116 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/76802 (2013.01); H01L 21/76814 (2013.01); H01L 29/665 (2013.01);
Abstract

According one embodiment, a method for manufacturing a semiconductor device is provided, which includes forming a pair of element isolation insulation films on a semiconductor substrate, forming a gate electrode structure on sides of the gate electrode structure, selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode by placing the substrate in a gas atmosphere selected from the group consisting of F, Cl, Br, I, H, O, Ar, or N; and irradiating the semiconductor substrate with microwave radiation. The method also includes depositing a metal film on a top surface of the diffusion layer and a top surface of the gate electrode, and a silicide film is formed by heating the substrate.

Find Patent Forward Citations

Honda, Makoto. (2015). Manufacturing method of a semiconductor device (U.S. Patent No. 8999855). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8999855

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…