The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Aug. 04, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Jae-Seon Yu, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 21/76811 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming a plurality of isolation patterns, isolated from each other by a plurality of trenches, over an underlying structure; forming a plurality of conductive lines filled in the trenches, forming contact holes by removing first portions of the isolation patterns, wherein the contact holes are defined by the plurality of conductive lines and second portions of the isolation patterns that remain after removing of the first portions of the isolation patterns, and forming plugs filled in the contact holes.