The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Dec. 20, 2013
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Jong-Kook Park, Gyeonggi-do, KR;

Han-Sang Song, Gyeonggi-do, KR;

Jin-Yul Lee, Gyeonggi-do, KR;

Chang-Ki Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/76877 (2013.01); H01L 21/76843 (2013.01); H01L 21/764 (2013.01);
Abstract

A method of fabricating a semiconductor device may include forming isolation structures that include openings, over a substrate; forming sacrificial spacers on sidewalls of the openings; forming, on the sacrificial spacers, first conductive patterns that are recessed in the openings; removing the sacrificial spacers, and defining air gaps; forming a liner layer that caps the first conductive patterns and the air gaps; forming second conductive patterns through silicidation of the liner layer; and forming third conductive patterns over the second conductive patterns.


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