The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Oct. 20, 2009
Applicants:
Naoki Makita, Osaka, JP;
Hiroshi Nakatsuji, Osaka, JP;
Inventors:
Naoki Makita, Osaka, JP;
Hiroshi Nakatsuji, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/146 (2006.01); G09G 5/10 (2006.01); G06F 3/042 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14665 (2013.01); G09G 5/10 (2013.01); G06F 3/042 (2013.01); H01L 27/12 (2013.01); H01L 27/1229 (2013.01); H01L 29/78633 (2013.01);
Abstract
A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.