The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Dec. 23, 2008
Applicants:

Hidekazu Takahashi, Tochigi, JP;

Daiki Yamada, Gunma, JP;

Yohei Monma, Tochigi, JP;

Hiroki Adachi, Tochigi, JP;

Shunpei Yamazaki, Tokyo, JP;

Inventors:

Hidekazu Takahashi, Tochigi, JP;

Daiki Yamada, Gunma, JP;

Yohei Monma, Tochigi, JP;

Hiroki Adachi, Tochigi, JP;

Shunpei Yamazaki, Tokyo, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 27/1214 (2013.01); H01L 27/14692 (2013.01); H01L 27/12 (2013.01);
Abstract

A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.


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