The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Nov. 18, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Satoru Fujii, Osaka, JP;

Takumi Mikawa, Shiga, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1625 (2013.01); H01L 27/2409 (2013.01); H01L 27/2418 (2013.01); H01L 27/2463 (2013.01);
Abstract

A nonvolatile memory element includes a first and a second electrode layers, and a variable resistance layer provided between the first and the second electrode layers and having a resistance value reversibly changing according to application of an electrical pulse, wherein the variable resistance layer includes a first variable resistance layer contacting the first electrode layer and comprising an oxygen-deficient first metal oxide, and a second variable resistance layer contacting the first variable resistance layer and comprising a second metal oxide having a smaller oxygen deficiency than the first metal oxide, and including host layers and an inserted layer between each of adjacent pairs of the host layers, wherein the second metal oxide of the inserted layer has a larger oxygen deficiency than the second metal oxide of the host layer, and the first metal oxide has a larger oxygen deficiency than the second metal oxide of the host layer.


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