The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jul. 30, 2012
Applicants:
Yunfei Liu, Beijing, CN;
Haizhou Yin, Poughkeepsie, NY (US);
Inventors:
Yunfei Liu, Beijing, CN;
Haizhou Yin, Poughkeepsie, NY (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66492 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/28158 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract
A method for manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate, wherein the gate stack comprises a gate dielectric layer and a gate conductor layer; selectively etching end portions of the gate dielectric layer to form gaps; and filling a material for the gate dielectric layer into the gaps.