The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 01, 2012
Applicant:
Sang Tae Ahn, Seoul, KR;
Inventor:
Sang Tae Ahn, Seoul, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 29/792 (2013.01); H01L 29/66833 (2013.01); H01L 21/28282 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/28273 (2013.01); H01L 29/42332 (2013.01); H01L 27/11521 (2013.01); H01L 29/0673 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled, removing the second material layers, and forming charge storage layers in respective regions from which the second material layers have been removed.