The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Nov. 17, 2011
Applicants:

Shawn O'rourke, Tempe, AZ (US);

Curtis Moyer, Phoenix, AZ (US);

Scott Ageno, Phoenix, AZ (US);

Dirk Bottesch, Mesa, AZ (US);

Barry O'brien, Chandler, AZ (US);

Michael Marrs, Phoenix, AZ (US);

Inventors:

Shawn O'Rourke, Tempe, AZ (US);

Curtis Moyer, Phoenix, AZ (US);

Scott Ageno, Phoenix, AZ (US);

Dirk Bottesch, Mesa, AZ (US);

Barry O'Brien, Chandler, AZ (US);

Michael Marrs, Phoenix, AZ (US);

Assignee:

Arizona Board of Regents, Scottsdale, AZ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/683 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 29/66765 (2013.01); H01L 29/78603 (2013.01); H01L 2221/6835 (2013.01); H01L 2924/3025 (2013.01);
Abstract

Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.


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