The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 28, 2012
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Ming-Chin Hung, Cupertino, CA (US);
Byung Duk Yang, Cupertino, CA (US);
Kyung Wook Kim, Cupertino, CA (US);
Shih Chang Chang, Cupertino, CA (US);
Assignee:
Apple Inc., Cupertino, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 21/768 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/768 (2013.01); H01L 27/1248 (2013.01); H01L 27/1288 (2013.01);
Abstract
A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.