The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 13, 2011
Haruo Nakazawa, Matsumoto, JP;
Masaaki Ogino, Matsumoto, JP;
Tsunehiro Nakajima, Matsumoto, JP;
Fuji Electric Co., Ltd., Kawasaki-Shi, JP;
Abstract
A semiconductor device and its method of manufacture. In the method, a front surface element structure is formed on a front surface of a semiconductor wafer, for example an SiC wafer. Then, a supporting substrate is bonded to wafer's front surface through an adhesive. The wafer's rear surface is ground and polished to thin it, with the supporting substrate bonded to the wafer. Next a V groove passing through the SiC wafer and reaching the adhesive is formed in the wafer's rear surface, and the wafer is cut into individual chips. An electrode film is formed on the groove's side wall and the chip's rear surface and a Schottky junction is formed between a drift layer, which is the chip, and the film. Then, the film is annealed. A tape is attached to the wafer's rear surface which has been cut into the chips. Then, the supporting substrate peels off from the wafer.