The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Mar. 20, 2014
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Mi-Ran Park, Daejeon, KR;
O-Kyun Kwon, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 31/184 (2013.01); H01L 31/02027 (2013.01); H01L 31/02161 (2013.01); Y02E 10/544 (2013.01);
Abstract
Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.