The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Apr. 11, 2014
Applicant:

Georgia Tech Research Corporation, Atlanta, GA (US);

Inventors:

Paul Kohl, Atlanta, GA (US);

Yu-Chun Chen, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/095 (2006.01); G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/16 (2006.01); G03F 7/36 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); B81C 1/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G03F 7/095 (2013.01); G03F 7/0045 (2013.01); G03F 7/039 (2013.01); G03F 7/168 (2013.01); G03F 7/36 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); B81C 1/00476 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/0108 (2013.01); H01L 21/7682 (2013.01);
Abstract

Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.


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