The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Dec. 24, 2010
Applicants:

Takashi Iseki, Aichi-gun, JP;

Yuka Yamada, Toyota, JP;

Kazuyuki Nakanishi, Seto, JP;

Yasuhiro Ozawa, Aichi-gun, JP;

Shingo Ohta, Nagoya, JP;

Inventors:

Takashi Iseki, Aichi-gun, JP;

Yuka Yamada, Toyota, JP;

Kazuyuki Nakanishi, Seto, JP;

Yasuhiro Ozawa, Aichi-gun, JP;

Shingo Ohta, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 8/02 (2006.01); H01M 4/66 (2006.01); C01B 31/02 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 31/04 (2006.01); H01M 4/96 (2006.01); C23C 16/26 (2006.01); C23C 16/503 (2006.01); H01M 4/62 (2006.01);
U.S. Cl.
CPC ...
C01B 31/02 (2013.01); H01M 8/0202 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/0438 (2013.01); H01M 4/625 (2013.01); H01M 4/663 (2013.01); H01M 4/96 (2013.01); Y02E 60/50 (2013.01); C23C 16/26 (2013.01); C23C 16/503 (2013.01);
Abstract

The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sphybrid orbital (Csp) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction. This film has a novel structure and exhibits a high electric conductivity. This film can be formed by DC plasma CVD method in which an electric discharge is generated by applying a voltage of not less than 1500 V to reaction gas including at least one kind of compound gas selected from gas of a carbocyclic compound containing Cspand gas of an N-containing heterocyclic compound containing Csp, and nitrogen and/or silicon, and nitrogen gas.


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