The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
May. 07, 2010
Applicants:
Masayuki Ishibashi, Tokyo, JP;
Tomonori Miura, Tokyo, JP;
Inventors:
Masayuki Ishibashi, Tokyo, JP;
Tomonori Miura, Tokyo, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/02 (2006.01); H01L 21/306 (2006.01); C30B 33/08 (2006.01); C30B 29/06 (2006.01); C30B 33/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); C30B 33/08 (2013.01); C30B 29/06 (2013.01); C30B 25/02 (2013.01); C30B 33/00 (2013.01); H01L 21/02381 (2013.01); H01L 21/02658 (2013.01); Y10S 438/959 (2013.01);
Abstract
The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.