The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Mar. 12, 2013
Method of growing gan whiskers from a gallium-containing solvent at low pressure and low temperature
Boris N. Feigelson, Springfield, VA (US);
Jennifer K. Hite, Arlington, VA (US);
Francis J. Kub, Arnold, MD (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Boris N. Feigelson, Springfield, VA (US);
Jennifer K. Hite, Arlington, VA (US);
Francis J. Kub, Arnold, MD (US);
Charles R. Eddy, Jr., Columbia, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile