The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Nov. 26, 2008
Applicants:

Toshiyuki Fuyutsume, Kyoto, JP;

Taro Nishino, Kyoto, JP;

Hisashi Yamazaki, Kyoto, JP;

Noboru Tamura, Yamanashi, JP;

Nakaba Ichikawa, Yamanashi, JP;

Masaki Aruga, Yamanashi, JP;

Inventors:

Toshiyuki Fuyutsume, Kyoto, JP;

Taro Nishino, Kyoto, JP;

Hisashi Yamazaki, Kyoto, JP;

Noboru Tamura, Yamanashi, JP;

Nakaba Ichikawa, Yamanashi, JP;

Masaki Aruga, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 3/007 (2006.01); H03H 3/04 (2006.01); C23C 4/06 (2006.01); H03H 3/10 (2006.01); H03H 9/02 (2006.01); C23C 4/04 (2006.01); C23C 4/10 (2006.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H03H 3/007 (2013.01); H03H 3/04 (2013.01); C23C 4/06 (2013.01); H03H 3/10 (2013.01); H03H 9/02559 (2013.01); C23C 4/04 (2013.01); C23C 4/10 (2013.01);
Abstract

Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT () on a principal surface () of a piezoelectric substrate (), and forming a film by thermal spraying a material () having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface () of the piezoelectric substrate () where the IDT () is formed.


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