The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Jul. 04, 2012
Applicants:

Shingo Masui, Tokushima, JP;

Yasuhiro Kawata, Anan, JP;

Hideyuki Fujimoto, Anan, JP;

Atsuo Michiue, Anan, JP;

Inventors:

Shingo Masui, Tokushima, JP;

Yasuhiro Kawata, Anan, JP;

Hideyuki Fujimoto, Anan, JP;

Atsuo Michiue, Anan, JP;

Assignee:

Nichia Corporation, Anan-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/22 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); B82Y 20/00 (2011.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/028 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/22 (2013.01); H01S 5/0224 (2013.01); H01S 5/0425 (2013.01); B82Y 20/00 (2013.01); H01S 5/0014 (2013.01); H01S 5/0021 (2013.01); H01S 5/0202 (2013.01); H01S 5/02476 (2013.01); H01S 5/028 (2013.01); H01S 5/34333 (2013.01); H01S 2301/176 (2013.01); H01S 5/02272 (2013.01); H01S 2301/173 (2013.01);
Abstract

To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.


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