The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Sep. 07, 2011
Applicants:

Alfred Lell, Maxhuette-Haidhof, DE;

Christoph Nelz, Wiesent, DE;

Christian Rumbolz, Lappersdorf, DE;

Stefan Hartauer, Wolfsegg, DE;

Inventors:

Alfred Lell, Maxhuette-Haidhof, DE;

Christoph Nelz, Wiesent, DE;

Christian Rumbolz, Lappersdorf, DE;

Stefan Hartauer, Wolfsegg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/14 (2006.01); H01S 5/00 (2006.01); H01L 21/00 (2006.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01); H01S 5/042 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2202 (2013.01); H01S 5/2231 (2013.01); H01S 5/0425 (2013.01); H01S 5/2219 (2013.01); H01S 5/222 (2013.01); H01S 5/4031 (2013.01); H01S 2301/176 (2013.01);
Abstract

An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.


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