The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 27, 2013
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); H01L 45/00 (2006.01); H01L 27/10 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); H01L 27/101 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0007 (2013.01); G11C 13/003 (2013.01); G11C 2013/0054 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01);
Abstract
A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a first variable resistance element and a first current steering element and a parameter generation circuit including a reference cell including a second variable resistance element and a second current steering element having the same current density-voltage characteristic as that of the first current steering element, wherein a conductive shorting layer for causing short-circuiting between the electrodes is formed on the side surfaces of the second variable resistance element.