The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Apr. 10, 2012
Yoshitaka Iwata, Kariya, JP;
Shogo Mori, Kariya, JP;
Tomoya Hirano, Oyama, JP;
Kazuhiko Minami, Oyama, JP;
Yoshitaka Iwata, Kariya, JP;
Shogo Mori, Kariya, JP;
Tomoya Hirano, Oyama, JP;
Kazuhiko Minami, Oyama, JP;
Kabushiki Kaisha Toyota Jidoshokki, Aichi-Ken, JP;
Showa Denko K. K., Tokyo, JP;
Abstract
A back metal layer () has a plurality of stress relaxation spaces (). Each stress relaxation space () is formed to open at least at one of the front surface and the back surface of the back metal layer (). A region in the back metal layer () that is directly below a semiconductor device () is defined as a directly-below region (A), and a region outside the directly-below region (A) that corresponds to and has the same dimensions as the directly-below region (A) is defined as a comparison region (A). The volume of the stress relaxation spaces () in the range of the directly-below region (A) is less than the volume of the stress relaxation spaces () formed in the range of the comparison region (A).