The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Aug. 30, 2011
Applicant:
Kouichi Yamada, Gifu-ken, JP;
Inventor:
Kouichi Yamada, Gifu-ken, JP;
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H03K 2217/0054 (2013.01);
Abstract
In a bidirectional switch using a metal-oxide-semiconductor field-effect transistor (MOSFET), the source terminal and the backgate terminal of the MOSFET are connected to each other via a transfer gate. A switch may be used between the connection point of the backgate terminal and the transfer gate of the MOSFET and the ground potential (where the MOSFET is an n-channel type) or supply potential (where the MOSFET is a p-channel type).