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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8994147 B1

PDFFull Text
Date of Patent:
Mar. 31, 2015

Filed:

Feb. 10, 2012

Semiconductor device and semiconductor element

Applicants:

Khalid Hassan Hussein, Tokyo, JP;

Shoji Saito, Tokyo, JP;

Inventors:

Khalid Hassan Hussein, Tokyo, JP;

Shoji Saito, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Zandra Smith

Assistant Examiner:

Molly Reida

Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/739 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 27/088 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H03K 17/16 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 27/0207 (2013.01); H01L 27/0211 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 27/082 (2013.01); H01L 27/088 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H03K 17/163 (2013.01); H03K 2017/6878 (2013.01);
Abstract

A semiconductor device includes a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of the first and second element portions are controlled by a signal from the first and second gates respectively. The semiconductor device further includes signal transmission means connected to the first gate and the second gate and transmitting a signal to the first gate and the second gate so that when the semiconductor element is to be turned on, the first element portion and the second element portion are simultaneously turned on, and so that when the semiconductor element is to be turned off, the second element portion is turned off a delay time after the first element portion is turned off.

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