The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jul. 22, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Hiroyuki Kutsukake, Yokohama, JP;
Masato Endo, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/115 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11529 (2013.01); G11C 16/30 (2013.01);
Abstract
A transfer transistor includes a pair of first diffusion regions and a gate electrode layer. The pair of first diffusion regions are formed in a surface of a semiconductor substrate, and are each connected to a contact. The gate electrode layer is formed on the semiconductor substrate via a gate insulating layer and has a pair of openings each surrounding the contact.
Quick Actions:
Kutsukake, Hiroyuki. (2015). Nonvolatile semiconductor memory device (U.S. Patent No. 8994121). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8994121
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile