The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Dec. 18, 2012
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joel T. Ficke, Bloomer, WI (US);

David M. Friend, Rochester, MN (US);

James D. Strom, Rochester, MN (US);

Erik S. Unterborn, Oronco, MN (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 27/11 (2006.01); H01L 29/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/761 (2013.01); H01L 21/762 (2013.01);
Abstract

A semiconductor chip having a P− substrate and an N+ epitaxial layer grown on the P− substrate is shown. A P− circuit layer is grown on top of the N+ epitaxial layer. A first moat having an electrically quiet ground connected to a first N+ epitaxial region is created by isolating the first N+ epitaxial region with a first deep trench. The first moat is surrounded, except for a DC path, by a second moat with a second N+ epitaxial region, created by isolating the second N+ epitaxial region with a second deep trench. The second moat may be arranged as a rectangular spiral around the first moat.


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