The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Nov. 11, 2011
Applicants:

Matthew S. Rogers, Mountain View, CA (US);

Klaus Schuegraf, San Jose, CA (US);

Inventors:

Matthew S. Rogers, Mountain View, CA (US);

Klaus Schuegraf, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/11521 (2013.01); H01L 21/67167 (2013.01);
Abstract

In some embodiments, an interlayer polysilicon dielectric cap disposed atop a substrate having a first floating gate, a second floating gate and an isolation layer disposed between the first floating gate and the second floating gate may include: a first nitrogen containing layer disposed atop an upper portion and sidewalls of the first floating gate and second floating gate; a first oxygen containing layer disposed atop the first nitrogen containing layer and an upper surface of the isolation layer; a second nitrogen containing layer disposed atop an upper portion and sidewalls of the first oxygen containing layer; and a second oxygen containing layer disposed atop the second nitrogen containing layer and an upper surface of the first oxygen containing layer.


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