The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

May. 23, 2013
Applicants:

Stmicroelectronics (Tours) Sas, Tours, FR;

Universite Francois Rabelais, Tours Cedex 1, FR;

Inventors:

Samuel Menard, Tours, FR;

Gaël Gautier, Veretz, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/747 (2006.01); H01L 29/74 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/74 (2013.01); H01L 29/66386 (2013.01); H01L 29/747 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01);
Abstract

A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component periphery includes, on the lower surface side, a porous silicon insulating ring penetrating into the substrate down to a depth greater than that of the lower layer.


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