The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Aug. 02, 2011
Applicants:

Eiji Muramoto, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Toshiyuki Oka, Kanagawa-ken, JP;

Inventors:

Eiji Muramoto, Kanagawa-ken, JP;

Shinya Nunoue, Chiba-ken, JP;

Toshiyuki Oka, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/49107 (2013.01); H01L 2924/3025 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.


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