The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 16, 2012
Akira Fujimoto, Kanagawa-ken, JP;
Tsutomu Nakanishi, Tokyo, JP;
Kenji Nakamura, Kanagawa-ken, JP;
Kumi Masunaga, Kanagawa-ken, JP;
Koji Asakawa, Kanagawa-ken, JP;
Akira Fujimoto, Kanagawa-ken, JP;
Tsutomu Nakanishi, Tokyo, JP;
Kenji Nakamura, Kanagawa-ken, JP;
Kumi Masunaga, Kanagawa-ken, JP;
Koji Asakawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile