The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Apr. 15, 2011
Srivatsa G. Kundalgurki, Austin, TX (US);
James F. Mchugh, Austin, TX (US);
Srivatsa G. Kundalgurki, Austin, TX (US);
James F. McHugh, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Etch stabilizing ions () are introduced, e.g., by ion implantation (), into a portion () of a substrate () underlying an etch window () in a masking layer () covering the substrate (), where a trench () is desired to be formed. When the portion () of the substrate () containing the etch stabilizing ions () is etched to form the trench (), the etch stabilizing ions () are progressively released at the etch interface (') as etching proceeds, substantially preventing gas micro-bubbles or other reaction products at the etch interface (′) from disrupting etching. Using this method (), products containing trenches () are much more easily formed and such trenches () have much smoother interior surface ().