The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Jul. 01, 2013
Applicant:

Shinshung Solar Energy Co., Ltd., Seongnam-si, KR;

Inventors:

Ji Soo Kim, Seongnam-si, KR;

Ho Sik Kim, Yongin-si, KR;

Ji Sun Kim, Incheon, KR;

Jong Youb Lim, Cheongwon-gun, KR;

Yeon Hee Hwang, Pohang-si, KR;

Hoon Joo Choi, Pyeongtaek-si, KR;

Jeong Jae Jo, Goesan-gun, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/065 (2012.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/065 (2013.01); H01L 31/02363 (2013.01); Y02E 10/52 (2013.01);
Abstract

A method of manufacturing a solar cell is disclosed. The method includes forming a dielectric film on a semiconductor substrate doped with a first conductive type impurity, exposing a high concentration doping region of a predetermined selective emitter by partially removing the dielectric film, and ion-implanting a second conductive type impurity into a front surface of the semiconductor substrate with the dielectric film formed thereon to form a high concentration doping layer in the semiconductor substrate to correspond to the high concentration doping region and to form a low concentration doping layer in the semiconductor substrate to correspond to a region in which the dielectric film is formed.


Find Patent Forward Citations

Loading…