The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jun. 21, 2013
Applicant:
Broadcom Corporation, Irvine, CA (US);
Inventors:
Wei Xia, Irvine, CA (US);
Xiangdong Chen, Irvine, CA (US);
Assignee:
Broadcom Corporation, Irvine, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 27/0629 (2013.01); H01L 24/14 (2013.01); H01L 21/823807 (2013.01); H01L 2224/14104 (2013.01); H01L 24/13 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A vertically stacked, planar junction Zener diode is concurrently formed with epitaxially grown FET raised S/D terminals. The structure and process of the Zener diode are compatible with Gate-Last high-k FET structures and processes. Lateral separation of diode and transistor structures is provided by modified STI masking. No additional photolithography steps are required. In some embodiments, the non-junction face of the uppermost diode terminal is silicided with nickel to additionally perform as a copper diffusion barrier.