The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Dec. 16, 2010
Applicants:

Takashi Igari, Shinjuku-ku, JP;

Takeshi Ishimine, Shinjuku-ku, JP;

Inventors:

Takashi Igari, Shinjuku-ku, JP;

Takeshi Ishimine, Shinjuku-ku, JP;

Assignee:

Hoya Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 17/06 (2006.01); C23C 14/34 (2006.01); C03B 23/00 (2006.01); B32B 7/02 (2006.01); C23C 14/10 (2006.01); C03B 40/00 (2006.01); C03B 11/08 (2006.01); C03C 3/21 (2006.01); C03C 17/245 (2006.01); G02B 1/10 (2006.01);
U.S. Cl.
CPC ...
C03B 40/00 (2013.01); C03B 11/08 (2013.01); C03C 3/21 (2013.01); C03C 17/245 (2013.01); G02B 1/10 (2013.01); C03C 2217/213 (2013.01);
Abstract

An aspect of the present invention relates to a press-molding glass material, which comprises a core part comprised of optical glass and a silicon oxide film of less than 15 nm in thickness covering at least a portion of the core part, the portion being to be an optically functional surface, as well as has a surface free energy as measured by a three-liquid method of equal to or lower than 75 mJ/m. A further aspect of the present invention relates to a method of manufacturing a press-molding glass material comprising a core part comprised of optical glass and a silicon oxide film covering at least a portion of the core part to be an optically functional surface. The silicon oxide film is less than 15 nm in thickness, and film formation processing is conducted with a film-forming material comprised of SiOin an atmosphere with an oxygen content falling within a range of equal to or higher than 5 volume percent but less than 20 volume percent to form the silicon oxide film on the above portion of the core part.


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