The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jun. 08, 2011
Applicants:
Joanna Aizenberg, Boston, MA (US);
Benjamin Hatton, Cambridge, MA (US);
Inventors:
Joanna Aizenberg, Boston, MA (US);
Benjamin Hatton, Cambridge, MA (US);
Assignee:
President and Fellows of Harvard College, Cambridge, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/10 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/54 (2006.01);
U.S. Cl.
CPC ...
C23C 16/402 (2013.01); B05D 3/105 (2013.01); B05D 3/107 (2013.01); B05D 3/10 (2013.01); C23C 16/45525 (2013.01); C23C 16/45534 (2013.01); C23C 16/45551 (2013.01); C23C 16/45595 (2013.01); C23C 16/545 (2013.01);
Abstract
An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.