The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

May. 30, 2012
Applicants:

Nobuo Yamaguchi, Tama, JP;

Kazuaki Matsuo, Inagi, JP;

Inventors:

Nobuo Yamaguchi, Tama, JP;

Kazuaki Matsuo, Inagi, JP;

Assignee:

Canon Anelva Corporation, Kawasaki-Shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/50 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); C23C 14/56 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/505 (2013.01); C23C 14/0063 (2013.01); C23C 14/3492 (2013.01); C23C 14/564 (2013.01); H01J 37/3408 (2013.01); H01J 37/3447 (2013.01);
Abstract

This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S) of introducing a process gas from a second gas introduction port formed outside the sputtering space.


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