The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Aug. 30, 2013
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Pedram Khalili Amiri, Los Angeles, CA (US);

Richard Dorrance, Santa Monica, CA (US);

Dejan Markovic, Los Angeles, CA (US);

Kang L. Wang, Santa Monica, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory (MeRAM) devices at high cell densities with multiple word access mechanisms, including a burst mode write of multiple words, and a back-to-back read of two words in consecutive clock cycles. In at least one preferred embodiment, these accesses are performed in a manner that prevents any possibility of a read disturbance arising.


Find Patent Forward Citations

Loading…