The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Nov. 11, 2013
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Hideki Asano, Kanagawa-ken, JP;

Takeharu Tani, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 9/083 (2006.01); H04N 5/335 (2011.01); G02B 5/20 (2006.01); G02B 13/00 (2006.01); H01L 27/146 (2006.01); H04N 5/225 (2006.01);
U.S. Cl.
CPC ...
H04N 5/335 (2013.01); G02B 5/201 (2013.01); G02B 13/001 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H04N 5/2257 (2013.01); H01L 27/14618 (2013.01);
Abstract

An imaging apparatus, including imaging optical system having a lens group and an aperture stop, and a solid-state image sensor which includes a photoelectric conversion layer made of an organic material and a color filter layer with color filters of two or more colors and a separation wall. The photoelectric conversion layer has a thickness of 0.1 82 m to 1 μm, each of the color filters has a refractive index of 1.5 to 1.8, the separation wall has a width of 0.05 μm to 0.2 μm and a refractive index of 1.22 to 1.34, and the lens group and the solid-state image sensor are disposed such that the relationship between a pixel pitch D (μm) of the sensor and a maximum angle α (°) of a principal ray incident on the sensor is 45≧α≧25.D−20 where D≦2.6 μm.


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