The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Nov. 27, 2013
Applicants:

Kwangho Kim, Osan-si, KR;

Jinhyuk Jeung, Yongin-si, KR;

Hyungjong Ko, Seongnam-si, KR;

Hosung Roh, Suwon-si, KR;

Hojin Park, Suwon-si, KR;

Sun-kyu Lee, Daejeon, KR;

Inventors:

Kwangho Kim, Osan-si, KR;

JinHyuk Jeung, Yongin-si, KR;

HyungJong Ko, Seongnam-si, KR;

HoSung Roh, Suwon-si, KR;

Hojin Park, Suwon-si, KR;

Sun-kyu Lee, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/00 (2006.01); G05F 3/02 (2006.01); G05F 3/20 (2006.01);
U.S. Cl.
CPC ...
G05F 3/02 (2013.01); G05F 3/205 (2013.01);
Abstract

Exemplary embodiments disclose a semiconductor device which includes a function block including a plurality of transistors; a temperature detector configured to detect a driving temperature of the function block in real time; and an adaptive body bias generator configured to provide a body bias voltage to adaptively adjust leakage currents of the transistors according to the detected driving temperature, wherein the adaptive body bias generator is further configured to generate a body bias voltage corresponding to a predetermined minimum leakage current according to the driving temperature.


Find Patent Forward Citations

Loading…