The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Feb. 23, 2011
Kenichi Sawada, Osaka, JP;
Kenichi Sawada, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
Provided is a semiconductor device which avoids an adverse effect of high temperatures due to a switching element and in which a circuit to prevent false firing is arranged on the same substrate as the switching element. An N-channel type MOSFETand a JFETof an N-channel type containing a semiconductor material of silicon carbide are individually arranged in proximity on conductive patternson a substrate, and a gate electrodeof the MOSFETand a drain electrodeof the JFETare connected by a lead. When an external drive signal for on/off control of MOSFETpropagates between source electrodeand drain electrodeof JFET, the channel resistance of JFETis changed to a large/small value according to a low/high level of gate voltage between source electrodeand gate electrode, whereby a leading edge of a switching waveform between drain electrodeand source electrodeof MOSFETcomes to have a gentler slope than a trailing edge thereof.