The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jan. 10, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/82 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 2224/16225 (2013.01); H01L 2225/06517 (2013.01); H01L 2924/15311 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/13091 (2013.01); H01L 2224/1161 (2013.01); H01L 2224/1369 (2013.01); H01L 2224/81011 (2013.01); H01L 24/16 (2013.01); H01L 2221/6835 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/1162 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13613 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/13616 (2013.01); H01L 2224/11009 (2013.01); H01L 2224/11002 (2013.01);
Abstract
An integrated circuit device including an interlayer insulating layer on a substrate, a wire layer on the interlayer insulating layer, and a through-silicon-via (TSV) contact pattern having an end contacting the wire layer and integrally extending from inside of a via hole formed through the interlayer insulating layer and the substrate to outside of the via hole.