The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8987858 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 24, 2015

Filed:

Mar. 18, 2013
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Avinash Srikrishnan Kashyap, Clifton Park, NY (US);

Peter Micah Sandvik, Niskayuna, NY (US);

Stephen Daley Arthur, Glenville, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/06 (2013.01); H01L 21/265 (2013.01); H01L 29/8618 (2013.01);
Abstract

A transient voltage suppression (TVS) device and a method of forming the device are provided. The device includes a first layer of wide band gap semiconductor material formed of a first conductivity type material, a second layer of wide band gap semiconductor material formed of a second conductivity type material over at least a portion of the first layer and comprising an ion implanted material structure between 0.1 micrometers (μm) and 22.0 μm thick, the second layer operating using punch-through physics, and a third layer of wide band gap semiconductor material formed of the first conductivity type material over at least a portion of the second layer.


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