The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 29, 2012
Applicants:
Fang-an Shu, Hsinchu, TW;
Yao-chou Tsai, Hsinchu, TW;
Ted-hong Shinn, Hsinchu, TW;
Inventors:
Assignee:
E Ink Holdings Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); G01J 1/42 (2006.01); H01L 31/032 (2006.01); H01L 31/0224 (2006.01); H01L 31/108 (2006.01);
U.S. Cl.
CPC ...
G01J 1/42 (2013.01); H01L 31/032 (2013.01); H01L 31/105 (2013.01); H01L 31/022483 (2013.01); H01L 31/108 (2013.01);
Abstract
A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.