The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Nov. 12, 2013
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Ling Liu, Shanghai, CN;

Jenhao Cheng, Shanghai, CN;

Xining Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 23/5227 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19051 (2013.01); H01L 2924/19104 (2013.01);
Abstract

Various embodiments provide ground shield structures, semiconductor devices, and methods for forming the same. An exemplary structure can include a substrate and a dielectric layer disposed on the substrate. The structure can further include multiple conductive rings disposed in the substrate, in the dielectric layer, and/or on the dielectric layer. Each conductive ring of the multiple conductive rings can have openings of about three or more, and the openings of the each conductive ring can divide the multiple conductive rings into a plurality of sub-conductive rings arranged spaced apart. The structure can further a ground ring electrically connected to each of the plurality of sub-conductive rings.


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