The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Oct. 01, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Yusuke Kawaguchi, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type; a first electrode electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a third semiconductor layer of the first conductivity type selectively provided on the second semiconductor layer; a second electrode electrically connected to the second semiconductor layer and the third semiconductor layer; a third electrode and a floating electrode provided from an upper surface side of the third semiconductor layer through the third semiconductor layer and the second semiconductor layer to the first semiconductor layer via a first insulating film; a second insulating film provided between the second electrode and the third electrode, the second electrode and the floating electrode.


Find Patent Forward Citations

Loading…