The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Jan. 30, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Ying Ming Chen, Hsinchu, TW;

Tzu Chieh Hsu, Hsinchu, TW;

Jhih-Sian Wang, Hsinchu, TW;

Chien-Fu Huang, Hsinchu, TW;

Shih-I Chen, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/10 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/387 (2013.01); H01L 33/62 (2013.01); H01L 24/05 (2013.01); H01L 33/10 (2013.01); H01L 33/22 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01);
Abstract

A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.


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